IEC 60747-9 : 2.0

IEC 60747-9 : 2.0

SEMICONDUCTOR DEVICES - DISCRETE DEVICES - PART 9: INSULATED-GATE BIPOLAR TRANSISTORS (IGBTS)

International Electrotechnical Committee

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Table of Contents

FOREWORD
1 Scope
2 Normative references
3 Terms and definitions
  3.1 Graphical symbol of IGBT
  3.2 General terms
  3.3 Terms related to ratings and characteristics;
      voltages and currents
  3.4 Terms related to ratings and characteristics;
      other characteristics
4 Letter symbols
  4.1 General
  4.2 Additional general subscripts
  4.3 List of letter symbols
5 Essential ratings and characteristics
  5.1 Ratings (limiting values)
  5.2 Characteristics
6 Measuring methods
  6.1 General
  6.2 Verification of ratings (limiting values)
  6.3 Methods of measurement
7 Acceptance and reliability
  7.1 General requirements
  7.2 Specific requirements
  7.3 Type tests and routine tests
Annex A (normative) Measuring method for collector-emitter
                    breakdown voltage
Annex B (normative) Measuring method for inductive load
                    turn-off current under specified conditions
Annex C (normative) Forward biased safe operating area (FBSOA)
Annex D (normative) Case non-rupture
Bibliography

Abstract

Provides product specific standards for terminology, letter symbols, essential ratings and characteristics, verification of ratings and methods of measurement for insulated-gate bipolar transistors (IGBTs).

General Product Information

Document Type Standard
Status Current
Publisher International Electrotechnical Committee
Committee TC 47

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