IEC 60747-9 : 2.0
IEC 60747-9 : 2.0
SEMICONDUCTOR DEVICES - DISCRETE DEVICES - PART 9: INSULATED-GATE BIPOLAR TRANSISTORS (IGBTS)
International Electrotechnical Committee
SEMICONDUCTOR DEVICES - DISCRETE DEVICES - PART 9: INSULATED-GATE BIPOLAR TRANSISTORS (IGBTS)
International Electrotechnical Committee
FOREWORD
1 Scope
2 Normative references
3 Terms and definitions
3.1 Graphical symbol of IGBT
3.2 General terms
3.3 Terms related to ratings and characteristics;
voltages and currents
3.4 Terms related to ratings and characteristics;
other characteristics
4 Letter symbols
4.1 General
4.2 Additional general subscripts
4.3 List of letter symbols
5 Essential ratings and characteristics
5.1 Ratings (limiting values)
5.2 Characteristics
6 Measuring methods
6.1 General
6.2 Verification of ratings (limiting values)
6.3 Methods of measurement
7 Acceptance and reliability
7.1 General requirements
7.2 Specific requirements
7.3 Type tests and routine tests
Annex A (normative) Measuring method for collector-emitter
breakdown voltage
Annex B (normative) Measuring method for inductive load
turn-off current under specified conditions
Annex C (normative) Forward biased safe operating area (FBSOA)
Annex D (normative) Case non-rupture
Bibliography
Provides product specific standards for terminology, letter symbols, essential ratings and characteristics, verification of ratings and methods of measurement for insulated-gate bipolar transistors (IGBTs).
Document Type | Standard |
Status | Current |
Publisher | International Electrotechnical Committee |
Committee | TC 47 |