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IEC 60664-4 : 2.0

IEC 60664-4 : 2.0

INSULATION COORDINATION FOR EQUIPMENT WITHIN LOW-VOLTAGE SYSTEMS - PART 4: CONSIDERATION OF HIGH-FREQUENCY VOLTAGE STRESS

International Electrotechnical Committee

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Table of Contents

FOREWORD
INTRODUCTION
1 Scope and object
2 Normative references
3 Terms and definitions
4 Clearances
  4.1 General conditions
  4.2 Basic information
  4.3 Homogeneous and approximately homogeneous fields
  4.4 Inhomogeneous fields
5 Creepage distances
  5.1 Experimental data
  5.2 Dimensioning of creepage distances
6 Solid insulation
  6.1 General consideration
  6.2 Influencing factors
  6.3 Dimensioning of solid insulation
7 High-frequency testing
  7.1 Basic requirements
  7.2 Test voltage source
  7.3 Conditioning
  7.4 High-frequency breakdown test
  7.5 High-frequency partial discharge test
  7.6 Examples of test results
8 Non sinusoidal voltages
  8.1 General considerations
  8.2 Periodic impulse voltage
  8.3 Harmonic analysis
  8.4 Dimensioning procedure and testing
Annex A (informative) Insulation characteristics of clearances
                      at high-frequency voltages
Annex B (informative) Insulation characteristics of creepage
                      distances at high-frequency voltages
Annex C (informative) Insulation characteristics of solid
                      insulation at high-frequency voltages
Annex D (normative) Testing of insulation at high-frequency
                    voltages
Annex E (informative) Insulation stressed with non-sinusoidal
                      high-frequency voltages
Annex F (informative) Dimensioning diagrams
Bibliography

Abstract

Deals with basic, supplementary and reinforced insulation subjected to high-frequency voltage stress within low-voltage equipment. It is applicable for the dimensioning of clearances, creepage distances and solid insulation stressed by any type of periodic voltages with a fundamental frequency above 30 kHz and up to 10 MHz.

General Product Information

Document Type Standard
Status Current
Publisher International Electrotechnical Committee
Committee TC 109

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