COMPONENTS FOR LOW-VOLTAGE SURGE PROTECTIVE DEVICES - PART 341: SPECIFICATION FOR THYRISTOR SURGE SUPPRESSORS (TSS)
International Electrotechnical Committee
FOREWORD
1 Scope
2 Normative references
3 Terms, letter symbols and definitions
3.1 Parametric terms, letter symbols and definitions
3.1.1 Main terminal ratings
3.1.2 Main terminal characteristics
3.1.3 Additional and derived parameters
3.1.4 Temperature related parameters
3.1.5 Gate terminal parameters
3.2 Terms and definitions for TSS, terminals and
characteristic terminology
3.2.1 TSS
3.2.2 Terminals
3.2.3 Characteristic terminology
4 Basic function and component description
4.1 TSS types
4.2 Basic device structure
4.3 Device equivalent circuit
4.4 Switching quadrant characteristics
4.4.1 Off-state region
4.4.2 Breakdown region
4.4.3 Negative resistance region
4.4.4 On-state region
4.5 Performance criteria of TSS
4.5.1 System loading
4.5.2 Equipment protection
4.5.3 Durability
4.6 Additional TSS structures
4.6.1 Gated TSS
4.6.2 Unidirectional blocking TSS
4.6.3 Unidirectional conducting TSS
4.6.4 Bidirectional TSS
4.6.5 Bidirectional TRIAC TSS
5 Standard test methods
5.1 Test conditions
5.1.1 Standard atmospheric conditions
5.1.2 Measurement errors
5.1.3 Measurement accuracy
5.1.4 Designated impulse shape and values
5.1.5 Multiple TSS
5.1.6 Gated TSS testing
5.2 Service conditions
5.2.1 Normal service conditions
5.2.2 Abnormal service conditions
5.3 Failures and fault modes
5.3.1 Degradation failure
5.3.2 High-off state current fault mode
5.3.3 High reverse current fault mode
5.3.4 High breakdown voltage fault mode
5.3.5 Low holding current fault mode
5.3.6 Catastrophic (cataleptic) failure
5.3.7 Short-circuit fault mode
5.3.8 Open-circuit fault mode
5.3.9 Critical failure
5.3.10 Fail-safe
5.4 Rating test procedures
5.4.1 Repetitive peak off-state voltage - V[DRM]
5.4.2 Repetitive peak on-state current - I[TRM]
5.4.3 Non-repetitive peak on-state current, I[TSM]
5.4.4 Non-repetitive peak pulse current, I[ppsm]
5.4.5 Repetitive peak reverse voltage, V[RRM]
5.4.6 Non-repetitive peak forward current, I[FSM]
5.4.7 Repetitive peak forward current, I[FRM]
5.4.8 Critical rate of rise of on-state current,
di/dt
5.5 Characteristic test procedures
5.5.1 Off-state current, I[D]
5.5.2 Repetitive peak off-state current - I[DRM]
5.5.3 Repetitive peak reverse current - I[RRM]
5.5.4 Breakover voltage - V[(BO)] and current,
I[(BO)]
5.5.5 On-state voltage, V[T]
5.5.6 Holding current, I[H]
5.5.7 Off-state capacitance, C[O]
5.5.8 Breakdown voltage, V[(BR)]
5.5.9 Switching voltage, V[S] and current I[S]
5.5.10 Forward voltage, V[F]
5.5.11 Peak forward recovery voltage, V[FRM]
5.5.12 Critical rate of rise of off-state voltage,
dv/dt
5.5.13 Temperature coefficient of breakdown voltage,
V[(BR)]
5.5.14 Variation of holding current with temperature
5.5.15 Temperature derating
5.5.16 Thermal resistance, R[th]
5.5.17 Transient thermal impedance, Z[th(t)]
5.5.18 Gate-to-adjacent terminal peak off-state
voltage and peak off-state gate current,
V[GDM] and I[GDM]
5.5.19 Gate reverse current, adjacent terminal open,
I[GAO], I[GKO]
5.5.20 Gate reverse current, main terminals
short-circuited, I[gas], IGKS]
5.5.21 Gate reverse current, on-state I[GAT], I[GKT]
5.5.22 Gate reverse current, forward conducting state,
I[GAF], I[GKF]
5.5.23 Gate switching charge, Q[GS]
5.5.24 Peak gate switching current, I[GSM]
5.5.25 Gate-to-adjacent terminal breakover voltage,
V[GK(BO)], V[GA(BO)]
Annex A (normative) Abnormal service conditions
Annex B (informative) US verification standards with referenced
impulse waveforms
Gives information about terms, letter symbols and definitions, basic functions, configurations and component structure, service conditions and fault modes, rating verification and characteristics measurement.
| Document Type | Standard |
| Status | Current |
| Publisher | International Electrotechnical Committee |
| Committee | TC 37 |
