IEC 60749-22 : 1.0

SEMICONDUCTOR DEVICES - MECHANICAL AND CLIMATIC TEST METHODS - PART 22: BOND STRENGTH

International Electrotechnical Committee

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FOREWORD INTRODUCTION 1 Scope and object    1.1 General description of the test    1.2 Description of the test apparatus (for all methods) 2 Methods A and B (see also annex A)    2.1 Scope    2.2 General description of the test 3 Method C    3.1 Scope    3.2 Method C: Bond peel 4 Method D    4.1 Scope    4.2 Method D: Bond shear (applied to flip chip) 5 Methods E and F    5.1 Scope    5.2 Method E: Push-off test    5.3 Method F: Pull-off test    5.4 Failure criteria for both methods E and F    5.5 Force to be applied (both methods) 6 Method G: Wire ball shear test    6.1 Scope    6.2 General description    6.3 Terms and definitions    6.4 Equipment and material    6.5 Procedure    6.6 Acceptable test limits 7 Information to be given in the relevant specification Annex A (normative) Guidance

Abstract

Applies to semiconductor devices (discrete devices and integrated circuits), this test measures bond strength or determines compliance with specified bond strength requirements.