SEMICONDUCTOR DEVICES - MECHANICAL AND CLIMATIC TEST METHODS - PART 18: IONIZING RADIATION (TOTAL DOSE)
International Electrotechnical Committee
FOREWORD
1 Scope
2 Terms and definitions
3 Test apparatus
3.1 Radiation source
3.2 Dosimetry system
3.3 Electrical test instruments
3.4 Test circuit board(s)
3.5 Cabling
3.6 Interconnect or switching system
3.7 Environmental chamber
4 Procedure
4.1 Sample selection and handling
4.2 Burn-in
4.3 Dosimetry measurements
4.4 Lead/aluminium (Pb/Al) container
4.5 Radiation level(s)
4.6 Radiation dose rate
4.6.1 Condition A
4.6.2 Condition B
4.6.3 Condition C
4.7 Temperature requirements
4.8 Electrical performance measurements
4.9 Test conditions
4.9.1 In-flux testing
4.9.2 Remote testing
4.9.3 Bias and loading conditions
4.10 Post-irradiation procedure
4.11 Extended room temperature anneal test
4.11.1 Need to perform an extended room
temperature anneal test
4.11.2 Extended room temperature anneal test procedure
4.12 MOS accelerated annealing test
4.12.1 Need to perform accelerated annealing test
4.12.2 Accelerated annealing test procedure
4.13 Test report
5 Summary
Gives a test procedure for defining requirements for testing packaged semiconductor integrated circuits and discrete semiconductor devices for ionizing radiation (total dose) effects from a cobalt-60 gamma ray source.
| Document Type | Standard |
| Status | Current |
| Publisher | International Electrotechnical Committee |
| Committee | TC 47 |
