IEC 62374 : 1.0

Table of Contents

FOREWORD<br>1 Scope<br>2 Terms and definitions <br>3 Test equipment<br>4 Test samples<br>&nbsp;&nbsp;4.1 General <br>&nbsp;&nbsp;4.2 Test structure: capacitor structure <br>&nbsp;&nbsp;4.3 Area <br>5 Procedures<br>&nbsp;&nbsp;5.1 General<br>&nbsp;&nbsp;5.2 Pre-test <br>&nbsp;&nbsp;5.3 Test conditions<br>&nbsp;&nbsp;5.4 Criteria <br>6 Lifetime estimation<br>&nbsp;&nbsp;6.1 General <br>&nbsp;&nbsp;6.2 Acceleration model<br>&nbsp;&nbsp;6.3 A procedure for a lifetime estimation <br>7 Lifetime dependence on gate oxide area <br>Annex A (informative) Supplementary determining test <br>&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;condition and data analysis<br>Bibliography

Abstract

Provides a test method of Time Dependent Dielectric Breakdown (TDDB) for gate dielectric films on semiconductor devices and a product lifetime estimation method of TDDB failure.

General Product Information

Published
Document Type	Standard
Status	Current
Publisher	International Electrotechnical Committee
Pages
ISBN
Committee	TC 47