SEMICONDUCTOR DEVICES - MECHANICAL AND CLIMATIC TEST METHODS - PART 38: SOFT ERROR TEST METHOD FOR SEMICONDUCTOR DEVICES WITH MEMORY
International Electrotechnical Committee
FOREWORD
1 Scope
2 Terms and definitions
3 Test apparatus
3.1 Measurement equipment
3.2 Alpha radiation source
3.2.1 Background information
3.2.2 Preferred sources
3.2.3 Variation in results
3.2.4 Effect of high radiation levels
3.2.5 Measurement accuracy
3.3 Test sample
4 Procedure
4.1 Alpha radiation accelerated soft error test
4.1.1 Surface preparation
4.1.2 Power supply voltage
4.1.3 Ambient temperature
4.1.4 Core cycle time
4.1.5 Data pattern
4.1.6 Distance between chip and radiation source
4.1.7 Number of measurement samples
4.2 Real-time soft error test
4.2.1 General
4.2.2 Power supply voltage
4.2.3 Ambient temperature
4.2.4 Operating frequency
4.2.5 Data pattern
4.2.6 Test time
4.2.7 Number of test samples
4.2.8 Environmental neutron testing
4.3 Neutron radiation accelerated soft error test
5 Evaluation
5.1 Alpha radiation accelerated soft error test
5.2 Real-time soft error test
6 Summary
Bibliography
Establishes a procedure for measuring the soft error susceptibility of semiconductor devices with memory when subjected to energetic particles such as alpha radiation.
| Document Type | Standard |
| Status | Current |
| Publisher | International Electrotechnical Committee |
| Committee | TC 47 |
