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IEC 62047-16 : 1ED 2015

IEC 62047-16 : 1ED 2015

SEMICONDUCTOR DEVICES - MICRO-ELECTROMECHANICAL DEVICES - PART 16: TEST METHODS FOR DETERMINING RESIDUAL STRESSES OF MEMS FILMS - WAFER CURVATURE AND CANTILEVER BEAM DEFLECTION METHODS

International Electrotechnical Committee

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Table of Contents

FOREWORD<br>1 Scope <br>2 Normative references <br>3 Terms and definitions <br>4 Testing methods <br>Bibliography

Abstract

Defines the test methods to measure the residual stresses of films with thickness in the range of 0,01 [mu]m to 10 [mu]m in MEMS structures fabricated by wafer curvature or cantilever beam deflection methods.

General Product Information

Document Type Standard
Status Current
Publisher International Electrotechnical Committee
Committee TC 47

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