Specials

All specials

Home>IEC 62880-1 : 1ED 2017

IEC 62880-1 : 1ED 2017

IEC 62880-1 : 1ED 2017

SEMICONDUCTOR DEVICES - STRESS MIGRATION TEST STANDARD - PART 1: COPPER STRESS MIGRATION TEST STANDARD

International Electrotechnical Committee

More details

Download

PDF AVAILABLE FORMATS IMMEDIATE DOWNLOAD
$34.32

$78.00

(price reduced by 56 %)

Table of Contents

FOREWORD<br>1 Scope <br>2 Normative references <br>3 Terms and definitions <br>4 Test method <br>5 Data to be reported<br>Annex A (informative) - Explanation for stress migration,<br>&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;stress induced voiding - Temperature, geometry<br>&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;dependence<br>Annex B (informative) - Example of geometry dependence<br>&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;for nose pattern<br>Bibliography

Abstract

Specifies a constant temperature (isothermal) aging method for testing copper (Cu) metallization test structures on microelectronics wafers for susceptibility to stress-induced voiding (SIV).

General Product Information

Document Type Standard
Status Current
Publisher International Electrotechnical Committee
Committee TC 47

Contact us