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IEC 63068-1:2019

IEC 63068-1:2019

Semiconductor devices - Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices - Part 1: Classification of defects

International Electrotechnical Committee

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Abstract

This part of IEC 63068 gives a classification of defects in as-grown 4H-SiC (Silicon Carbide) epitaxial layers.

General Product Information

Document Type Standard
Status Current
Publisher International Electrotechnical Committee
Committee TC 47

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