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IEC 63068-2:2019

IEC 63068-2:2019

Semiconductor devices – Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices – Part 2: Test method for defects using optical inspection

International Electrotechnical Committee

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Abstract

This part of IEC 63068 provides definitions and guidance in use of optical inspection for detecting as-grown defects in commercially available 4H-SiC (Silicon Carbide) epitaxial wafers.

General Product Information

Document Type Standard
Status Current
Publisher International Electrotechnical Committee
Committee TC 47

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