IEEE 1160 : 1993

Table of Contents

1 Overview
1.1 Scope
1.2 Purpose
2 References
3 Letter symbols
4 Introduction
5 Sample preparation and measurement of net
     electrically active impurity concentration modulus
     (NA - ND)
5.1 Sample preparation for van der Pauw measurements
5.2 Measurement and analysis
5.3 Spatial dependence of (NA - ND)
6 Deep-level transient spectroscopy (DLTS) for the
     characterization of point-defect trapping centers
     (NT)
6.1 Equipment
6.2 Sample selection and preparation for DLTS
6.3 Measurement procedure
6.4 Majority-carrier deep levels in p-type HPGe
6.5 Majority-carrier deep levels in n-type HPGe
7 Crystallographic properties
7.1 Crystallographic orientation
7.2 Sample preparation
7.3 Reporting
8 Bibliography
Figures
5.2 f(RAB,CD/RBC,DA) vs RAB,CD/RBC,DA
5.3 Factor r for n-type HPGe, two crystallographic
5.4 Factor r for p-type HPGe
6.1 DLTS waveforms and gate timing
6.2 Delta Vc/Vp waveforms
Table
1 Majority-carrier deep levels in p-type HPGe
Annex A
Tables
A1 Round-robin measurements of n-type sample
A2 Round-robin measurements of p-type sample
A3 Magnetic fields used for measurements and r values
     for n-type and p-type HPGe
A4 Average values and standard deviations, whole-slice
     measurements
A5 Supplementary data, n-type slice - laboratory no.
     4, procedure B
A6 p-Type data: direction of transient
A7 Averages for the measured drift mobility in units
     of 10 to the power 4 cm squared per volt per second

Abstract

Establishes uniform procedures for measurements and analyses in the determination and reporting of bulk properties relevant to geranium radiation detector fabrication and performance. Coverage includes letter symbols, crystallographic properties and detailed diagrams.

General Product Information

Published
Document Type	Standard
Status	Current
Publisher	Institute of Electrical & Electronics Engineers
Pages
ISBN