JIS C 8105-2-23:2004

Table of Contents

Introduction
23.1 Scope
23.2 Normative references
23.3 General test requirements
23.4 Definitions
23.5 Classification
23.6 Marking
23.7 Construction
23.8 Creepage distance and clearances
23.9 Provisions for earthing
23.10 Terminals and electrical connections
23.11 External and internal wiring
23,12 Protection against electric shock
23.13 Endurance tests and thermal tests
23.14 Resistance to dust, solid objects and moisture
23.15 Insulation resistance and electric strength
23.16 Resistance to heat, fire and tracking
Annex 1 (informative) - Comparison table between JIS and
corresponding International Standard

Abstract

This part of JIS C 5381 specifies avalanche breakdown diodes which represent one type of surge protective device component used in the design and construction of surge protective devices connected to low-voltage power distribution systems, transmission, and signaling networks. Test specifications in this Standard are for single ABDs consisting of two terminals. However, multiple ABDs may be assembled within a single package defined as a diode array. Each diode within the array can be tested to this specification. This Standard contains a series of test criteria for determining the electrical characteristics of the ABD. From the standard test methods described herein, the performance characteristics and ratings of the ABD can be verified or established for specific packaged designs

General Product Information

Published
Document Type	Standard
Status	Current
Publisher	Japanese Standards Association
Pages
ISBN