Surface chemical analysis - Determination of surface elemental contamination on silicon wafers by total-reflection X-ray fluorescence (TXRF) spectroscopy
Japanese Standards Association
This Standard specifies a TXRF method for the measurement of the atomic surface density of elemental contamination on chemomechanically polished or epitaxial silicon wafer surfaces. The method is applicable to: elements of atomic number from 16 (S) to 92 (U); contamination elements with atomic surface densities from 1 multiplied by 10 to the 10th power atoms/square centimeters to 1 multiplied by 10 to the 14th power atoms/square centimeters; contamination elements with atomic surface densities from 5 multiplied by 10 to the 8th power atoms/square centimeters to 5 multiplied by 10 to the 12th power atoms/square centimeters using a VPD (vapour-phase decomposition) specimen preparation method.
| Document Type | Standard |
| Status | Current |
| Publisher | Japanese Standards Association |
