JIS C 2162:2010

Abstract

This Japanese Industrial Standard specifies the matters related to the long-term reliability test of gate insulator for silicon carbide (SiC) devices at high temperature, namely, the test apparatus used, the structure of a sample, the method for eliminating the effect of defects in an SiC substrate and the test procedure.

General Product Information

Published
Document Type	Standard
Status	Current
Publisher	Japanese Standards Association
Pages
ISBN